K3LK4L40DM-BGCT vs K3LK8K80CM-MFCP Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K3LK4L40DM-BGCT sa pamamagitan ng Samsung Electronics at K3LK8K80CM-MFCP sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K3LK4L40DM-BGCT K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics

K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics

K3LK4L40DM-BGCT ✓ Nakahanda
Samsung Electronics
K3LK8K80CM-MFCP K3LK8K80CM-MFCP - 48Gbit LPDDR5 6400Mbps DRAM | Samsung

K3LK8K80CM-MFCP - 48Gbit LPDDR5 6400Mbps DRAM | Samsung

K3LK8K80CM-MFCP ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro K3LK4L40DM-BGCT K3LK8K80CM-MFCP
Brand Samsung Electronics Samsung Electronics
Kategorya DRAM Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory DRAM (SDRAM component) LPDDR5 SDRAM
Manufacturer Samsung Electronics —
Density [DATA_NEEDED: Density] 48 Gbit (6 GB)
Organization (x-width) [DATA_NEEDED: Organization] —
Rate ng Data [DATA_NEEDED: Data Rate] —
Supply Voltage Class [DATA_NEEDED: Supply Voltage] —
Latensya ng CAS [DATA_NEEDED: CAS Latency] —
Package Type BGA (per -BGC ordering-code suffix) —
Package Ball Count [DATA_NEEDED: Ball Count] —
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon [DATA_NEEDED: Operating Temperature Range] -40 C to +105 C (automotive-grade)
Refresh Rate [DATA_NEEDED: Refresh Interval] —
Tindminan RoHS [DATA_NEEDED: RoHS Status] unknown
Lead Free [DATA_NEEDED: Lead-Free Status] —
Level ng MSL [DATA_NEEDED: Moisture Sensitivity Level] —
Packaging Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] —
Organisasyon — [DATA_NEEDED: organization (x width)]
Pin Speed — 6400 Mbps
Data Rate (package) — 51.2 GB/s (family max)
Interface — LPDDR5 (JESD209-5 class low-power DRAM interface)
Packhaging — 315-ball FBGA (MFCP)
Ball Count — 315
Volte ng Pagbibigay — [DATA_NEEDED: VDD/VDDQ voltage]
Power Saving vs LPDDR4X — Approximately 20%
Generation — LPDDR5 (5th generation low-power DRAM)
Application Grade — Automotive-grade storage chip
Place of Origin — Johor, Malaysia

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