K4A4G085WD-BCRC vs K3LK4L40DM-BGCT Perbandingan
Perbandingan bersamaan detil K4A4G085WD-BCRC dari Samsung Electronics dan K3LK4L40DM-BGCT dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A4G085WD-BCRC | K3LK4L40DM-BGCT |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Memory Density | 4 Gbit | — |
| Organisasi | 512M x 8 | — |
| Tipe Memori | DDR4 SDRAM (D-die) | DRAM (SDRAM component) |
| Laju Data | 2400 Mb/s (PC2400) | [DATA_NEEDED: Data Rate] |
| Tegangan Pemuat | 1.2 V | — |
| Paket | FBGA-78 (TFBGA) | — |
| Number of Terminals | 78 | — |
| Antarmuka | Parallel | — |
| Access Mode | Multi-bank page burst | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS Latency] |
| Rentang Suhu Kerja | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS Status] |
| Level MSL | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: Moisture Sensitivity Level] |
| Manufacturer | — | Samsung Electronics |
| Density | — | [DATA_NEEDED: Density] |
| Organization (x-width) | — | [DATA_NEEDED: Organization] |
| Supply Voltage Class | — | [DATA_NEEDED: Supply Voltage] |
| Package Type | — | BGA (per -BGC ordering-code suffix) |
| Package Ball Count | — | [DATA_NEEDED: Ball Count] |
| Suhu Kerja | — | [DATA_NEEDED: Operating Temperature Range] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Interval] |
| Lead Free | — | [DATA_NEEDED: Lead-Free Status] |
| Packaging | — | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] |