K4A4G085WD-BCRC vs K4A4G045WD-BCRC Perbandingan
Perbandingan bersamaan detil K4A4G085WD-BCRC dari Samsung Electronics dan K4A4G045WD-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A4G085WD-BCRC | K4A4G045WD-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Memory Density | 4 Gbit | — |
| Organisasi | 512M x 8 | 1G x4 |
| Tipe Memori | DDR4 SDRAM (D-die) | DDR4 SDRAM |
| Laju Data | 2400 Mb/s (PC2400) | — |
| Tegangan Pemuat | 1.2 V | — |
| Paket | FBGA-78 (TFBGA) | TFBGA-78 (FBGA-78) |
| Number of Terminals | 78 | 78 |
| Antarmuka | Parallel | — |
| Access Mode | Multi-bank page burst | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CL for BCRC bin] |
| Rentang Suhu Kerja | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | Self refresh supported (per Partstack listing) |
| Status RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Level MSL | [DATA_NEEDED: MSL Level] | — |
| Density | — | 4 Gb |
| Die Generation | — | D-die |
| Supply Voltage VDD | — | 1.2 V |
| Speed Grade / Data Rate | — | BCRC (2400 Mbps per Samsung product selection guide) |
| Self Refresh | — | Yes |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Clock Frequency | — | [DATA_NEEDED: CK frequency for BCRC bin] |
| Bank Architecture | — | DDR4 8 internal banks with bank groups |
| Lead Free Status | — | [DATA_NEEDED: lead-free status] |
| Packaging Option | — | [DATA_NEEDED: tape and reel quantity] |