K4A4G165WD-BCPB vs K4A4G165WF-BCRC Perbandingan
Perbandingan bersamaan detil K4A4G165WD-BCPB dari Samsung Electronics dan K4A4G165WF-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A4G165WF-BCRC - 4Gb DDR4-2400 SDRAM | Samsung Electronics
K4A4G165WF-BCRC ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A4G165WD-BCPB | K4A4G165WF-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $17,08 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Laju Data | 2133 MT/s | — |
| Core Voltage | 1.2 V | — |
| Paket | FBGA-96 | FBGA-96 (TFBGA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Die Generation | D-die | — |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency at 2133 speed bin] | — |
| Burst Length | 8 (BL8, fixed/chop) | — |
| Antarmuka | DDR4 (synchronous, source-synchronous strobe) | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Pb-Free | Yes (per Samsung part-numbering suffix) | — |
| Status RoHS | Compliant (lead-free suffix) | Compliant |
| Refresh | Self-refresh supported (TCSR per DDR4 standard features) | — |
| Speed Grade | — | DDR4-2400 |
| Tegangan Pemuat | — | 1.2 V |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Die Type | — | Samsung 4Gb F-die |
| Bank / Bank Group Architecture | — | 8 banks, bank groups |
| Data Mask | — | Supported (DM) |
| CRC / CA Parity | — | Supported |
| ZQ Calibration | — | Supported |
| Dynamic ODT | — | Supported |
| Auto Precharge | — | Supported |
| Asynchronous Reset | — | Supported |