K4A4G165WD-BCPB vs K4A4G165WF-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G165WD-BCPB sa pamamagitan ng Samsung Electronics at K4A4G165WF-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G165WF-BCRC - 4Gb DDR4-2400 SDRAM | Samsung Electronics
K4A4G165WF-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G165WD-BCPB | K4A4G165WF-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $17.08 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Rate ng Data | 2133 MT/s | — |
| Core Voltage | 1.2 V | — |
| Packhaging | FBGA-96 | FBGA-96 (TFBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Die Generation | D-die | — |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency at 2133 speed bin] | — |
| Burst Length | 8 (BL8, fixed/chop) | — |
| Interface | DDR4 (synchronous, source-synchronous strobe) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Pb-Free | Yes (per Samsung part-numbering suffix) | — |
| Tindminan RoHS | Compliant (lead-free suffix) | Compliant |
| Refresh | Self-refresh supported (TCSR per DDR4 standard features) | — |
| Speed Grade | — | DDR4-2400 |
| Volte ng Pagbibigay | — | 1.2 V |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Die Type | — | Samsung 4Gb F-die |
| Bank / Bank Group Architecture | — | 8 banks, bank groups |
| Data Mask | — | Supported (DM) |
| CRC / CA Parity | — | Supported |
| ZQ Calibration | — | Supported |
| Dynamic ODT | — | Supported |
| Auto Precharge | — | Supported |
| Asynchronous Reset | — | Supported |