K4A4G165WD-BCRC vs K4A4G165WF-BCRC Perbandingan
Perbandingan bersamaan detil K4A4G165WD-BCRC dari Samsung Electronics dan K4A4G165WF-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A4G165WF-BCRC - 4Gb DDR4-2400 SDRAM | Samsung Electronics
K4A4G165WF-BCRC ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A4G165WD-BCRC | K4A4G165WF-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $17,08 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Speed Bin | DDR4-2400 (BCRC) | — |
| Tegangan Pemuat | 1.2 V | 1.2 V |
| Paket | FBGA-96 | FBGA-96 (TFBGA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Process Generation | Samsung D-die | — |
| Tipe Antarmuka | DDR4 (double data rate, parallel) | — |
| On-Die Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| Auto Precharge | Yes | Supported |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | Supported |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Status RoHS | Lead free / RoHS Compliant | Compliant |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Speed Grade | — | DDR4-2400 |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Die Type | — | Samsung 4Gb F-die |
| Bank / Bank Group Architecture | — | 8 banks, bank groups |
| Data Mask | — | Supported (DM) |
| CRC / CA Parity | — | Supported |
| Dynamic ODT | — | Supported |
| Asynchronous Reset | — | Supported |