K4A4G165WD-BCRC vs K4A4G165WF-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G165WD-BCRC sa pamamagitan ng Samsung Electronics at K4A4G165WF-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G165WF-BCRC - 4Gb DDR4-2400 SDRAM | Samsung Electronics
K4A4G165WF-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G165WD-BCRC | K4A4G165WF-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $17.08 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Speed Bin | DDR4-2400 (BCRC) | — |
| Volte ng Pagbibigay | 1.2 V | 1.2 V |
| Packhaging | FBGA-96 | FBGA-96 (TFBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Generation | Samsung D-die | — |
| Uri ng Interface | DDR4 (double data rate, parallel) | — |
| On-Die Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| Auto Precharge | Yes | Supported |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | Supported |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Tindminan RoHS | Lead free / RoHS Compliant | Compliant |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Speed Grade | — | DDR4-2400 |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Die Type | — | Samsung 4Gb F-die |
| Bank / Bank Group Architecture | — | 8 banks, bank groups |
| Data Mask | — | Supported (DM) |
| CRC / CA Parity | — | Supported |
| Dynamic ODT | — | Supported |
| Asynchronous Reset | — | Supported |