K4A4G165WD-BCTD vs K4A4G165WD-BCRC Perbandingan
Perbandingan bersamaan detil K4A4G165WD-BCTD dari Samsung Electronics dan K4A4G165WD-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A4G165WD-BCTD | K4A4G165WD-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organisasi | 256M x 16 | 256M x 16 |
| Laju Data | 2666 Mbps/pin (-BCTD speed grade) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Core Supply (VPP) | 2.5 V | — |
| Antarmuka | SSTL-12 | — |
| Data Mask | Yes (DM per byte lane) | — |
| Bank Architecture | 16 banks / 4 bank groups | — |
| Paket | 96-ball FBGA | FBGA-96 |
| Tipe Mounting | Surface Mount (BGA) | Surface Mount |
| Suhu Kerja | 0C to +85C (commercial) | [DATA_NEEDED: operating temperature range] |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes (external RZQ resistor) | Yes |
| CRC / CA Parity | CRC read/write support | — |
| Reset | Asynchronous reset (RESET_n) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Lead free / RoHS Compliant |
| Speed Bin | — | DDR4-2400 (BCRC) |
| Tegangan Pemuat | — | 1.2 V |
| Process Generation | — | Samsung D-die |
| Tipe Antarmuka | — | DDR4 (double data rate, parallel) |
| On-Die Termination (ODT) | — | Yes |
| Data Mask Function | — | Yes |
| Auto Precharge | — | Yes |
| CRC Function | — | Yes |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |