K4A4G165WD-BCTD vs K4A4G165WD-BCRC 比較
詳細並排比較 K4A4G165WD-BCTD 由 Samsung Electronics 與 K4A4G165WD-BCRC 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A4G165WD-BCTD | K4A4G165WD-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| 組織 | 256M x 16 | 256M x 16 |
| 資料速率 | 2666 Mbps/pin (-BCTD speed grade) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Core Supply (VPP) | 2.5 V | — |
| 介面 | SSTL-12 | — |
| Data Mask | Yes (DM per byte lane) | — |
| Bank Architecture | 16 banks / 4 bank groups | — |
| 封裝 | 96-ball FBGA | FBGA-96 |
| 安裝類型 | Surface Mount (BGA) | Surface Mount |
| 工作溫度 | 0C to +85C (commercial) | [DATA_NEEDED: operating temperature range] |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes (external RZQ resistor) | Yes |
| CRC / CA Parity | CRC read/write support | — |
| Reset | Asynchronous reset (RESET_n) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Lead free / RoHS Compliant |
| Speed Bin | — | DDR4-2400 (BCRC) |
| 供應電壓 | — | 1.2 V |
| Process Generation | — | Samsung D-die |
| 介面類型 | — | DDR4 (double data rate, parallel) |
| On-Die Termination (ODT) | — | Yes |
| Data Mask Function | — | Yes |
| Auto Precharge | — | Yes |
| CRC Function | — | Yes |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |