K4A8G085WC-BCTD vs K4A8G085WC-BCPB Perbandingan
Perbandingan bersamaan detil K4A8G085WC-BCTD dari Samsung Electronics dan K4A8G085WC-BCPB dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Waktu Beli TerakhirSamsung Electronics
K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung
K4A8G085WC-BCPB ✗ Akhir HidupPerbandingan Spesifikasi
| Parameter Umum | K4A8G085WC-BCTD | K4A8G085WC-BCPB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Waktu Pembelian Terakhir | Akhir Hidup |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Laju Data | 2666 Mbps (PC4-2133) | 2133 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2 V (1.14 V to 1.26 V) | — |
| Paket | 78-ball FBGA (78FBGA) | 78FBGA |
| Ball Pitch | 0.8 mm | — |
| Suhu Kerja | 0C to +95C | 0 C to +85 C |
| Standard Operating Temp Range | 0C to +85C | — |
| Burst Length | 8 (chop 4) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Tipe Antarmuka | Synchronous, parallel | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Tegangan Pemuat | — | 1.2 V |
| Number of Terminals | — | 78 |
| Maximum Seated Height | — | 1.2 mm |
| Speed Grade | — | DDR4-2133 |
| Fitur | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Refresh | — | [DATA_NEEDED: refresh rate 1x/2x] |
| Latensi CAS | — | [DATA_NEEDED: CAS latency] |
| Die Revision | — | [DATA_NEEDED: die revision] |
| Standard Package Quantity | — | [DATA_NEEDED: standard package quantity] |