K4A8G085WC-BCTD vs K4A8G085WC-BCPB Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BCTD disebabkan oleh Samsung Electronics dan K4A8G085WC-BCPB disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K4A8G085WC-BCTD K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD ⚠ Bahagian terakhir untuk beli
Samsung Electronics
K4A8G085WC-BCPB K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung

K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung

K4A8G085WC-BCPB ✗ Akhir Hayat

Pengandingan Spesifikasi

Parametr K4A8G085WC-BCTD K4A8G085WC-BCPB
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs DRAM
Status Lingkungan Hidup Masa Terakhir Dibeli Akhir Hidup
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
Organisasi 1G x 8 1G x 8
Kadar Data 2666 Mbps (PC4-2133) 2133 Mbps
Supply Voltage (VDD/VDDQ) 1.2 V (1.14 V to 1.26 V) —
Kemasan 78-ball FBGA (78FBGA) 78FBGA
Ball Pitch 0.8 mm —
Suhu Operasi 0C to +95C 0 C to +85 C
Standard Operating Temp Range 0C to +85C —
Burst Length 8 (chop 4) —
Auto Precharge Yes —
Asynchronous Reset Yes —
CRC Function Yes —
ZQ Calibration Yes —
Dynamic ODT Yes —
Data Mask Yes —
Jenis Antaramuka Synchronous, parallel —
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Tegangan Pemberi Arus — 1.2 V
Number of Terminals — 78
Maximum Seated Height — 1.2 mm
Speed Grade — DDR4-2133
Ciri-ciri — Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask
Refresh — [DATA_NEEDED: refresh rate 1x/2x]
Latensi CAS — [DATA_NEEDED: CAS latency]
Die Revision — [DATA_NEEDED: die revision]
Standard Package Quantity — [DATA_NEEDED: standard package quantity]

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