K4A8G085WC-BCWE vs H5AN8G8NAFR-VKC Perbandingan
Perbandingan bersamaan detil K4A8G085WC-BCWE dari Samsung Electronics dan H5AN8G8NAFR-VKC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A8G085WC-BCWE | H5AN8G8NAFR-VKC |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $7,38 | — |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Laju Data | 3200 Mbps (DDR4-3200) | — |
| Tegangan Pemuat | 1.2 V | — |
| Suhu Kerja | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Paket | 78FBGA | 78-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | DDR4 (parallel, double data rate) | SSTL12 |
| Application Class | Computing / Embedded main memory | — |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) | Supported (per DDR4 JEDEC architecture) |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) | — |
| Status RoHS | Compliant (per JLCPCB listing) | Compliant (Lead-Free & Halogen-Free) |
| Refresh | Standard DDR4 refresh mechanisms | — |
| On-Die Termination | Yes (DDR4 ODT) | — |
| Speed Grade | — | DDR4-2666 (VKC bin) |
| Supply Voltage (VDD) | — | 1.2 V |
| Burst Length | — | 8 (BL8) |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes (DLL for output skew control) |
| Process Technology | — | CMOS |
| Recommended Application | — | Main memory requiring large density and high bandwidth |