K4A8G085WC-BCWE vs H5AN8G8NAFR-VKC 比較
詳細並排比較 K4A8G085WC-BCWE 由 Samsung Electronics 與 H5AN8G8NAFR-VKC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G085WC-BCWE | H5AN8G8NAFR-VKC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $7.38 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| 組織 | 1G x 8 | 1G x 8 |
| 資料速率 | 3200 Mbps (DDR4-3200) | — |
| 供應電壓 | 1.2 V | — |
| 工作溫度 | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| 封裝 | 78FBGA | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | DDR4 (parallel, double data rate) | SSTL12 |
| Application Class | Computing / Embedded main memory | — |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) | Supported (per DDR4 JEDEC architecture) |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) | — |
| RoHS 狀態 | Compliant (per JLCPCB listing) | Compliant (Lead-Free & Halogen-Free) |
| Refresh | Standard DDR4 refresh mechanisms | — |
| On-Die Termination | Yes (DDR4 ODT) | — |
| Speed Grade | — | DDR4-2666 (VKC bin) |
| Supply Voltage (VDD) | — | 1.2 V |
| Burst Length | — | 8 (BL8) |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes (DLL for output skew control) |
| Process Technology | — | CMOS |
| Recommended Application | — | Main memory requiring large density and high bandwidth |