K4A8G165WB-BCWE vs NT5AD512M16B4-HR Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BCWE dari Samsung Electronics dan NT5AD512M16B4-HR dari Nanya Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BCWE | NT5AD512M16B4-HR |
|---|---|---|
| Merek | Samsung Electronics | Nanya Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $6,25 | — |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Laju Data | 3200 Mbps/pin | 3200 Mbps |
| Tegangan Pemuat | 1.2 V | 1.2V |
| Access Time | 19 ns | — |
| Antarmuka | Parallel | — |
| Paket | 96FBGA | 96-ball TFBGA |
| Suhu Kerja | 0C to +85C | — |
| Tipe Mounting | Surface Mount | — |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | — |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | — |
| Termination | On-die termination (ODT) | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance statement] | — |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 8Gb |
| Organisasi | — | 512M x 16 |
| Temperature Range | — | 0°C to +95°C |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| RoHS | — | Compliant |