K4A8G165WB-BCWE vs NT5AD512M16B4-HR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WB-BCWE sa pamamagitan ng Samsung Electronics at NT5AD512M16B4-HR sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ NakahandaNanya Technology
NT5AD512M16B4-HR - 8Gb DDR4 SDRAM 512Mx16 1.2V | Nanya
NT5AD512M16B4-HR ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WB-BCWE | NT5AD512M16B4-HR |
|---|---|---|
| Brand | Samsung Electronics | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $6.25 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Rate ng Data | 3200 Mbps/pin | 3200 Mbps |
| Volte ng Pagbibigay | 1.2 V | 1.2V |
| Access Time | 19 ns | — |
| Interface | Parallel | — |
| Packhaging | 96FBGA | 96-ball TFBGA |
| Temperature na Operasyon | 0C to +85C | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | — |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | — |
| Termination | On-die termination (ODT) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance statement] | — |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 8Gb |
| Organisasyon | — | 512M x 16 |
| Temperature Range | — | 0°C to +95°C |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| RoHS | — | Compliant |