K4A8G165WC-BCPB vs K4AAG165WA-BCPB Perbandingan
Perbandingan bersamaan detil K4A8G165WC-BCPB dari Samsung Electronics dan K4AAG165WA-BCPB dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4AAG165WA-BCPB - 16Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4AAG165WA-BCPB ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A8G165WC-BCPB | K4AAG165WA-BCPB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM (volatile DRAM) | Volatile DRAM (DDR4 SDRAM) |
| Ukuran Memori | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Laju Data | DDR4-2133 (2133 Mbps/pin) | 3200 Mbps |
| Tegangan Pemuat | 1.2 V | — |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Antarmuka | DDR4 (16-bit data bus) | — |
| Paket | 96-ball FBGA (TFBGA) | FBGA-96 |
| Die Generation | C-die (1Y nm class) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | 0C to +95C | [DATA_NEEDED: operating temperature for BCPB grade] |
| Fitur | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Termination | On-die termination (ODT), dynamic | — |
| Level MSL | [DATA_NEEDED: MSL Level] | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Standard | JEDEC DDR4 SDRAM | — |
| Technology | — | DDR4 |
| Density | — | 16 Gb |
| Organisasi | — | 1G x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| Interface Voltage (VDDQ) | — | 1.2 V |
| Memory Format | — | DRAM |
| Packaging | — | Tray |
| Product Status | — | Active |
| Power Consumption | — | 25% lower than DDR3 (per Samsung DDR4 family) |
| Bank Group Architecture | — | Yes (DDR4 internal bank groups) |
| On-Die Termination (ODT) | — | Yes |
| Max Capacity Family | — | Up to 32GB component (Samsung DDR4 family) |