K4A8G165WC-BCPB vs K4AAG165WA-BCPB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WC-BCPB sa pamamagitan ng Samsung Electronics at K4AAG165WA-BCPB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung
K4A8G165WC-BCPB ✓ NakahandaSamsung Electronics
K4AAG165WA-BCPB - 16Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4AAG165WA-BCPB ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WC-BCPB | K4AAG165WA-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM (volatile DRAM) | Volatile DRAM (DDR4 SDRAM) |
| Laki ng Memory | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Rate ng Data | DDR4-2133 (2133 Mbps/pin) | 3200 Mbps |
| Volte ng Pagbibigay | 1.2 V | — |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Interface | DDR4 (16-bit data bus) | — |
| Packhaging | 96-ball FBGA (TFBGA) | FBGA-96 |
| Die Generation | C-die (1Y nm class) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +95C | [DATA_NEEDED: operating temperature for BCPB grade] |
| Mga Karakteristika | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Termination | On-die termination (ODT), dynamic | — |
| Level ng MSL | [DATA_NEEDED: MSL Level] | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Standard | JEDEC DDR4 SDRAM | — |
| Technology | — | DDR4 |
| Density | — | 16 Gb |
| Organisasyon | — | 1G x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| Interface Voltage (VDDQ) | — | 1.2 V |
| Memory Format | — | DRAM |
| Packaging | — | Tray |
| Product Status | — | Active |
| Power Consumption | — | 25% lower than DDR3 (per Samsung DDR4 family) |
| Bank Group Architecture | — | Yes (DDR4 internal bank groups) |
| On-Die Termination (ODT) | — | Yes |
| Max Capacity Family | — | Up to 32GB component (Samsung DDR4 family) |