K4AAG085WA-BCWE vs K4AAG165WA-BCWE Perbandingan
Perbandingan bersamaan detil K4AAG085WA-BCWE dari Samsung Electronics dan K4AAG165WA-BCWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4AAG085WA-BCWE | K4AAG165WA-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | — |
| Organisasi | 2G x 8 | — |
| Laju Data | 3200 Mbps (DDR4-3200) | 3200 Mbps (DDR4-3200) |
| Tegangan Pemuat | 1.2 V | 1.2 V |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Suhu Kerja | 0 C to 85 C | -40C to +95C |
| Paket | 78-ball FBGA (9 x 11 mm, 0.8 mm pitch) | 96-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | JEDEC DDR4 | — |
| Memory Width | 8-bit | — |
| Refresh | Auto-refresh (per JEDEC DDR4) | — |
| Application Class | Main memory / embedded DRAM | — |
| Status RoHS | Compliant (per JLCPCB listing) | Compliant |
| Manufacturer | Samsung Electronics | — |
| Ukuran Memori | — | 16 Gb (2 GB) |
| Memory Organization | — | 1G x 16 |
| Package Dimensions | — | 13 x 9 mm |
| Ball Pitch | — | 0.8 mm |
| Tipe Antarmuka | — | Parallel, DDR4 |
| Memory Format | — | DRAM (Volatile) |
| Technology | — | DDR4 SDRAM, 8n prefetch, bank group architecture |
| Packaging | — | Tray |
| Product Status | — | Active |