K4AAG165WM-BCWE vs K4AAG165WA-BCWE Perbandingan
Perbandingan bersamaan detil K4AAG165WM-BCWE dari Samsung Electronics dan K4AAG165WA-BCWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4AAG165WM-BCWE | K4AAG165WA-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | — |
| Organisasi | 256M x 16 (1G x 16) | — |
| Laju Data | 3200 Mbps | 3200 Mbps (DDR4-3200) |
| Antarmuka | Parallel (DDR4) | — |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Access Time (Clock Cycle Time) | [DATA_NEEDED: tCK for BCWE bin] | — |
| Latensi CAS | [DATA_NEEDED: CL at 3200 Mbps] | — |
| Bank Groups | 4 (x16 configuration) | — |
| Burst Length | 8 | — |
| Paket | 78-ball FBGA | 96-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: temperature range for WM-BCWE] | -40C to +95C |
| Die Revision | W (WM suffix) | — |
| Status RoHS | Compliant | Compliant |
| Operating Frequency | 1600 MHz (DDR, 3200 Mbps) | — |
| Ukuran Memori | — | 16 Gb (2 GB) |
| Memory Organization | — | 1G x 16 |
| Tegangan Pemuat | — | 1.2 V |
| Package Dimensions | — | 13 x 9 mm |
| Ball Pitch | — | 0.8 mm |
| Tipe Antarmuka | — | Parallel, DDR4 |
| Memory Format | — | DRAM (Volatile) |
| Technology | — | DDR4 SDRAM, 8n prefetch, bank group architecture |
| Packaging | — | Tray |
| Product Status | — | Active |