K4RAH086VB-BCWM vs K4RAH165VB-BIQK Perbandingan
Perbandingan bersamaan detil K4RAH086VB-BCWM dari Samsung Electronics dan K4RAH165VB-BIQK dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4RAH086VB-BCWM | K4RAH165VB-BIQK |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $44,55 | — |
| Tipe Memori | DDR5 SDRAM | DDR5 SDRAM |
| Ukuran Memori | 16 Gb | — |
| Organisasi | 2G x 8 | 1G x 16 |
| Laju Data | 5600 Mbps | 4800 Mbps (MT/s) |
| Tegangan Pemuat | 1.1 V | — |
| Antarmuka | DDR5 (parallel) | — |
| Paket | FBGA-82 | [DATA_NEEDED: exact package ball count / FBGA designation] |
| Tipe Mounting | Surface Mount | — |
| Technology | DRAM (volatile) | — |
| Speed Grade | BCWM | — |
| Suhu Kerja | Commercial temperature range (per datasheet) | [DATA_NEEDED: operating temperature range] |
| ECC | On-die ECC | — |
| Burst Length | 32 (BL32, DDR5 standard) | — |
| Status RoHS | Compliant | — |
| Status Lingkungan Hidup | Active | — |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) | — |
| Density | — | 16 Gb |
| Supply Voltage (VDD) | — | 1.1 V |
| On-Die ECC | — | Yes |
| Auto Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| DLL Enabled Mode | — | Yes (spec mode per datasheet) |
| Merek | — | Samsung Semiconductor |