K4RAH086VB-BCWM vs K4RAH165VB-BIQK Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4RAH086VB-BCWM disebabkan oleh Samsung Electronics dan K4RAH165VB-BIQK disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4RAH086VB-BCWM | K4RAH165VB-BIQK |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $44.55 | — |
| Jenis Ingatan | DDR5 SDRAM | DDR5 SDRAM |
| Saiz Ingatan | 16 Gb | — |
| Organisasi | 2G x 8 | 1G x 16 |
| Kadar Data | 5600 Mbps | 4800 Mbps (MT/s) |
| Tegangan Pemberi Arus | 1.1 V | — |
| Antaramuka | DDR5 (parallel) | — |
| Kemasan | FBGA-82 | [DATA_NEEDED: exact package ball count / FBGA designation] |
| Jenis Pemasangan | Surface Mount | — |
| Technology | DRAM (volatile) | — |
| Speed Grade | BCWM | — |
| Suhu Operasi | Commercial temperature range (per datasheet) | [DATA_NEEDED: operating temperature range] |
| ECC | On-die ECC | — |
| Burst Length | 32 (BL32, DDR5 standard) | — |
| Status RoHS | Compliant | — |
| Status Lingkungan Hidup | Active | — |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) | — |
| Density | — | 16 Gb |
| Supply Voltage (VDD) | — | 1.1 V |
| On-Die ECC | — | Yes |
| Auto Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| DLL Enabled Mode | — | Yes (spec mode per datasheet) |
| Merek | — | Samsung Semiconductor |