K4RCH046VM-2CLP vs K4RHE165VB-BCWM Perbandingan
Perbandingan bersamaan detil K4RCH046VM-2CLP dari Samsung Electronics dan K4RHE165VB-BCWM dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4RCH046VM-2CLP | K4RHE165VB-BCWM |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR5 SDRAM | DDR5 SDRAM |
| Density | 32 Gb | 24 Gb |
| Organisasi | 4G x 4 | 1G x 16 |
| Laju Data | 6400 Mbps | 5600 Mbps |
| Tegangan Pemuat | 1.1 V | 1.1 V |
| Suhu Kerja | 0C to 85C | 0 C to +85 C |
| Paket | 78-FBGA | 106 FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | x4 component | — |
| Antarmuka | DDR5 (SSTL-style low-voltage signaling) | Parallel, DDR5 |
| Family Speed Range (Samsung DDR5) | up to 7200 Mbps | — |
| Family Density Range (Samsung DDR5) | 16 Gb to 32 Gb | — |
| Power Efficiency vs DDR4 | Approx. 30% greater | — |
| Product Status (per distributor listing) | Sample / Active supply via distribution | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Product Status | — | Mass Production |
| Generation | — | DDR5 |
| Application Segment | — | DDR5 memory modules and HPC systems |
| Speed Grade Suffix | — | BCWM |
| tCK (Clock Period) | — | [DATA_NEEDED: clock period] |
| Latensi CAS | — | [DATA_NEEDED: CAS latency] |