K4RCH046VM-2CLP vs K4RHE165VB-BCWM 比較
詳細並排比較 K4RCH046VM-2CLP 由 Samsung Electronics 與 K4RHE165VB-BCWM 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4RCH046VM-2CLP | K4RHE165VB-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 32 Gb | 24 Gb |
| 組織 | 4G x 4 | 1G x 16 |
| 資料速率 | 6400 Mbps | 5600 Mbps |
| 供應電壓 | 1.1 V | 1.1 V |
| 工作溫度 | 0C to 85C | 0 C to +85 C |
| 封裝 | 78-FBGA | 106 FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | x4 component | — |
| 介面 | DDR5 (SSTL-style low-voltage signaling) | Parallel, DDR5 |
| Family Speed Range (Samsung DDR5) | up to 7200 Mbps | — |
| Family Density Range (Samsung DDR5) | 16 Gb to 32 Gb | — |
| Power Efficiency vs DDR4 | Approx. 30% greater | — |
| Product Status (per distributor listing) | Sample / Active supply via distribution | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Product Status | — | Mass Production |
| Generation | — | DDR5 |
| Application Segment | — | DDR5 memory modules and HPC systems |
| Speed Grade Suffix | — | BCWM |
| tCK (Clock Period) | — | [DATA_NEEDED: clock period] |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency] |