K4RCH046VM-2CLP vs K4RHE165VB-BCWM Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4RCH046VM-2CLP sa pamamagitan ng Samsung Electronics at K4RHE165VB-BCWM sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4RCH046VM-2CLP - 32Gb DDR5 SDRAM 6400Mbps | Samsung
K4RCH046VM-2CLP ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K4RCH046VM-2CLP | K4RHE165VB-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR5 SDRAM | DDR5 SDRAM |
| Density | 32 Gb | 24 Gb |
| Organisasyon | 4G x 4 | 1G x 16 |
| Rate ng Data | 6400 Mbps | 5600 Mbps |
| Volte ng Pagbibigay | 1.1 V | 1.1 V |
| Temperature na Operasyon | 0C to 85C | 0 C to +85 C |
| Packhaging | 78-FBGA | 106 FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Configuration | x4 component | — |
| Interface | DDR5 (SSTL-style low-voltage signaling) | Parallel, DDR5 |
| Family Speed Range (Samsung DDR5) | up to 7200 Mbps | — |
| Family Density Range (Samsung DDR5) | 16 Gb to 32 Gb | — |
| Power Efficiency vs DDR4 | Approx. 30% greater | — |
| Product Status (per distributor listing) | Sample / Active supply via distribution | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Product Status | — | Mass Production |
| Generation | — | DDR5 |
| Application Segment | — | DDR5 memory modules and HPC systems |
| Speed Grade Suffix | — | BCWM |
| tCK (Clock Period) | — | [DATA_NEEDED: clock period] |
| Latensya ng CAS | — | [DATA_NEEDED: CAS latency] |