K4RHE165VB-BCWM vs K4RHE086VP Perbandingan
Perbandingan bersamaan detil K4RHE165VB-BCWM dari Samsung Electronics dan K4RHE086VP dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4RHE165VB-BCWM | K4RHE086VP |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DDR5 |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR5 SDRAM | DDR5 SDRAM |
| Density | 24 Gb | 24 Gb |
| Organisasi | 1G x 16 | x8 |
| Laju Data | 5600 Mbps | — |
| Tegangan Pemuat | 1.1 V | — |
| Paket | 106 FBGA | — |
| Suhu Kerja | 0 C to +85 C | — |
| Product Status | Mass Production | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | Parallel, DDR5 | — |
| Generation | DDR5 | — |
| Application Segment | DDR5 memory modules and HPC systems | — |
| Speed Grade Suffix | BCWM | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| tCK (Clock Period) | [DATA_NEEDED: clock period] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency] | — |
| Process Node | — | 1a-class (D1a) |
| Package Type | — | FBGA |
| Tipe Antarmuka | — | DDR5 (double data rate 5) |
| Maximum Data Rate | — | [DATA_NEEDED: speed bin data rate] |
| Supply Voltage (VDD) | — | [DATA_NEEDED: VDD in V] |
| On-Die ECC | — | Yes (DDR5 standard feature) |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| Rentang Suhu Kerja | — | [DATA_NEEDED: temperature range] |
| Merek | — | Samsung Electronics |
| Product Family | — | Samsung K4RHE DDR5 series |
| Typical Application | — | Server / client DRAM modules |