K6X0808C1D-GF55T vs K6X0808C1D-BF55 Perbandingan
Perbandingan bersamaan detil K6X0808C1D-GF55T dari Samsung Electro-Mechanics dan K6X0808C1D-BF55 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electro-Mechanics
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
K6X0808C1D-GF55T ✓ AktifSamsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K6X0808C1D-GF55T | K6X0808C1D-BF55 |
|---|---|---|
| Merek | Samsung Electro-Mechanics | Samsung Electronics |
| Kategori | DRAM | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | SRAM - Asynchronous | Asynchronous SRAM |
| Ukuran Memori | 256 Kbit | 256 Kbit |
| Organisasi | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemuat | 5.0 V | 5 V |
| Antarmuka | Parallel | Parallel |
| Process Technology | Full CMOS | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Paket | 28-SOP (450 mil) | 28-SOP |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Active Current | [DATA_NEEDED: active current] | — |
| Data Retention Voltage | Low data retention voltage supported (per datasheet) | — |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Address Bus Width | 15 bit | — |
| Lebar Bus Data | 8 bit | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Packaging | Tape & Reel (T suffix) | — |
| Technology | — | CMOS |
| Operating Current | — | [DATA_NEEDED: operating current] |
| Memory Format | — | SRAM |
| Clock Frequency | — | N/A (asynchronous) |
| Refresh | — | Not required (static memory) |