K6X0808C1D-GF70000 vs K6X0808C1D-GF55T Perbandingan
Perbandingan bersamaan detil K6X0808C1D-GF70000 dari Samsung Electronics dan K6X0808C1D-GF55T dari Samsung Electro-Mechanics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K6X0808C1D-GF70000 - 256Kbit 5V SRAM 70ns | Samsung | 28-SOP
K6X0808C1D-GF70000 ✓ AktifSamsung Electro-Mechanics
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
K6X0808C1D-GF55T ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K6X0808C1D-GF70000 | K6X0808C1D-GF55T |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electro-Mechanics |
| Kategori | DRAM | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | SRAM - Asynchronous | SRAM - Asynchronous |
| Ukuran Memori | 256 Kbit | 256 Kbit |
| Organisasi | 32K x 8 bit | 32K x 8 |
| Antarmuka | Parallel | Parallel |
| Access Time | 70 ns | 55 ns |
| Supply Voltage - Min | 4.5 V | — |
| Supply Voltage - Max | 5.5 V | — |
| Technology | Low Power CMOS | — |
| Address Bus Width | 15 bit (A0-A14) | 15 bit |
| Lebar Bus Data | 8 bit (tri-state I/O) | 8 bit |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Input/Output Levels | TTL compatible | — |
| Paket | 28-SOP | 28-SOP (450 mil) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Operating Current | [DATA_NEEDED: operating current] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Tegangan Pemuat | — | 5.0 V |
| Process Technology | — | Full CMOS |
| Active Current | — | [DATA_NEEDED: active current] |
| Data Retention Voltage | — | Low data retention voltage supported (per datasheet) |
| Packaging | — | Tape & Reel (T suffix) |