K6X0808C1D-GF70000 vs K6X0808C1D-GF55T Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-GF70000 disebabkan oleh Samsung Electronics dan K6X0808C1D-GF55T disebabkan oleh Samsung Electro-Mechanics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K6X0808C1D-GF70000 K6X0808C1D-GF70000 - 256Kbit 5V SRAM 70ns | Samsung | 28-SOP

K6X0808C1D-GF70000 - 256Kbit 5V SRAM 70ns | Samsung | 28-SOP

K6X0808C1D-GF70000 ✓ Aktif
Samsung Electro-Mechanics
K6X0808C1D-GF55T K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung

K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung

K6X0808C1D-GF55T ✓ Aktif

Pengandingan Spesifikasi

Parametr K6X0808C1D-GF70000 K6X0808C1D-GF55T
Merek Samsung Electronics Samsung Electro-Mechanics
Kategori DRAM DRAM
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan SRAM - Asynchronous SRAM - Asynchronous
Saiz Ingatan 256 Kbit 256 Kbit
Organisasi 32K x 8 bit 32K x 8
Antaramuka Parallel Parallel
Access Time 70 ns 55 ns
Supply Voltage - Min 4.5 V —
Supply Voltage - Max 5.5 V —
Technology Low Power CMOS —
Address Bus Width 15 bit (A0-A14) 15 bit
Lebar Bus Data 8 bit (tri-state I/O) 8 bit
Control Signals CE, OE, WE CE, OE, WE
Input/Output Levels TTL compatible —
Kemasan 28-SOP 28-SOP (450 mil)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Standby Current [DATA_NEEDED: standby current] [DATA_NEEDED: standby current]
Operating Current [DATA_NEEDED: operating current] —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Tegangan Pemberi Arus — 5.0 V
Process Technology — Full CMOS
Active Current — [DATA_NEEDED: active current]
Data Retention Voltage — Low data retention voltage supported (per datasheet)
Packaging — Tape & Reel (T suffix)

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