K9LCG08U1M vs K9XXG08U0M Perbandingan
Perbandingan bersamaan detil K9LCG08U1M dari Samsung Electronics dan K9XXG08U0M dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K9LCG08U1M | K9XXG08U0M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Flash | Memory ICs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Tipe Memori | NAND Flash, MLC | NAND Flash |
| Density | 64 Gbit (8 GB) | 8 G-bit |
| Organisasi | x8 I/O | 1G x 8 bit |
| Antarmuka | Asynchronous multiplexed NAND I/O | 8-bit parallel NAND (command/address/data multiplexed) |
| Cell Type | MLC (2 bits per cell) | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) |
| Paket | BGA | 48-pin TSOP-I |
| Tipe Mounting | Surface Mount | Surface Mount |
| Tegangan Pemuat | [DATA_NEEDED: supply voltage] | 2.7 V to 3.6 V (3.3V device) |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Page Read Time | [DATA_NEEDED: page read time] | 20 us |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Status RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Spare Area | — | 256 M-bit (per K9K8G08U0M) |
| Access Interface Standard | — | Samsung legacy NAND command set |
| Bad Block Management | — | Factory bad block marking (host-managed ECC required) |
| ECC Requirement | — | External ECC by host controller |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |