K9LCG08U1M vs K9XXG08U0M مقایسه
مقایسه دقیق کنار به کنار K9LCG08U1M توسط Samsung Electronics و K9XXG08U0M توسط Samsung Electronics. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | K9LCG08U1M | K9XXG08U0M |
|---|---|---|
| برند | Samsung Electronics | Samsung Electronics |
| دسته‌بندی | Flash | Memory ICs |
| وضعیت چرخه عمر | فعال | Obsolete |
| نوع حافظه | NAND Flash, MLC | NAND Flash |
| Density | 64 Gbit (8 GB) | 8 G-bit |
| سازمان | x8 I/O | 1G x 8 bit |
| رابط | Asynchronous multiplexed NAND I/O | 8-bit parallel NAND (command/address/data multiplexed) |
| Cell Type | MLC (2 bits per cell) | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) |
| بسته‌بندی | BGA | 48-pin TSOP-I |
| نوع نصب | Surface Mount | Surface Mount |
| ولتاژ تغذیه | [DATA_NEEDED: supply voltage] | 2.7 V to 3.6 V (3.3V device) |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Page Read Time | [DATA_NEEDED: page read time] | 20 us |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| دمای کاری | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| وضعیت RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Spare Area | — | 256 M-bit (per K9K8G08U0M) |
| Access Interface Standard | — | Samsung legacy NAND command set |
| Bad Block Management | — | Factory bad block marking (host-managed ECC required) |
| ECC Requirement | — | External ECC by host controller |
| سطح MSL | — | [DATA_NEEDED: moisture sensitivity level] |