K9LCG08U1M vs K9XXG08U0M Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9LCG08U1M disebabkan oleh Samsung Electronics dan K9XXG08U0M disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K9LCG08U1M | K9XXG08U0M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Flash | Memory ICs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Jenis Ingatan | NAND Flash, MLC | NAND Flash |
| Density | 64 Gbit (8 GB) | 8 G-bit |
| Organisasi | x8 I/O | 1G x 8 bit |
| Antaramuka | Asynchronous multiplexed NAND I/O | 8-bit parallel NAND (command/address/data multiplexed) |
| Cell Type | MLC (2 bits per cell) | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) |
| Kemasan | BGA | 48-pin TSOP-I |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Tegangan Pemberi Arus | [DATA_NEEDED: supply voltage] | 2.7 V to 3.6 V (3.3V device) |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Page Read Time | [DATA_NEEDED: page read time] | 20 us |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Status RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Spare Area | — | 256 M-bit (per K9K8G08U0M) |
| Access Interface Standard | — | Samsung legacy NAND command set |
| Bad Block Management | — | Factory bad block marking (host-managed ECC required) |
| ECC Requirement | — | External ECC by host controller |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |