K9LCG08U1M vs K9XXG08U0M Karşılaştırma
Ayrıntılı yan yana karşılaştırma K9LCG08U1M tarafından Samsung Electronics ve K9XXG08U0M tarafından Samsung ElectronicsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | K9LCG08U1M | K9XXG08U0M |
|---|---|---|
| Marka | Samsung Electronics | Samsung Electronics |
| Kategori | Flash | Memory ICs |
| Yaşam Döngüsü Durumu | Aktif | Obsolete |
| Bellek Türü | NAND Flash, MLC | NAND Flash |
| Density | 64 Gbit (8 GB) | 8 G-bit |
| Organizasyon | x8 I/O | 1G x 8 bit |
| Arayüz | Asynchronous multiplexed NAND I/O | 8-bit parallel NAND (command/address/data multiplexed) |
| Cell Type | MLC (2 bits per cell) | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) |
| Paket | BGA | 48-pin TSOP-I |
| Montaj Türü | Surface Mount | Surface Mount |
| Besleme Gerilimi | [DATA_NEEDED: supply voltage] | 2.7 V to 3.6 V (3.3V device) |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Page Read Time | [DATA_NEEDED: page read time] | 20 us |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| İşletim Sıcaklığı | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS Durumu | unknown | [DATA_NEEDED: RoHS status] |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Spare Area | — | 256 M-bit (per K9K8G08U0M) |
| Access Interface Standard | — | Samsung legacy NAND command set |
| Bad Block Management | — | Factory bad block marking (host-managed ECC required) |
| ECC Requirement | — | External ECC by host controller |
| MSL Seviyesi | — | [DATA_NEEDED: moisture sensitivity level] |