K9XXG08UXM vs K9MDG08U5M Perbandingan
Perbandingan bersamaan detil K9XXG08UXM dari Samsung Electronics dan K9MDG08U5M dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K9XXG08UXM | K9MDG08U5M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Ukuran Memori | 2G x 8 Bit (2Gb) | — |
| Memory Cell Array Organization | (1G + 32M) bit x 8 bit | — |
| Data Register | (2K + 64) bit x 8 bit | — |
| Tegangan Pemuat | 2.7 V to 3.6 V | — |
| Page Size | (2K + 64) Byte | [DATA_NEEDED: page size] |
| Block Size | (256K + 8K) Byte | [DATA_NEEDED: block size] |
| Program Operation | Automatic Page Program, (2K + 64) Byte | — |
| Erase Operation | Automatic Block Erase, (256K + 8K) Byte | — |
| I/O Interface | 8-bit multiplexed address/data/command | — |
| Control Signals | CLE, ALE, CE, RE, WE, WP, R/B | — |
| Cell Type | SLC (single-level cell) NAND | MLC (2 bits per cell) |
| Paket | 48-pin TSOP | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Access Time (tR) | [DATA_NEEDED: Access Time] | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | unknown |
| Tipe Memori | — | MLC Large Block NAND Flash |
| Density | — | 16 Gbit (2 GB) |
| Organisasi | — | 16G x 8 bit |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Antarmuka | — | Asynchronous x8 multiplexed address/data |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |