M29F160FT55N3F2 vs M29F800FB55N3F2 Perbandingan

Perbandingan bersamaan detil M29F160FT55N3F2 dari Micron Technology dan M29F800FB55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29F160FT55N3F2 M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 ✓ Aktif
Micron Technology
M29F800FB55N3F2 M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29F160FT55N3F2 M29F800FB55N3F2
Merek Micron Technology Micron Technology
Kategori Flash Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori NOR Flash (Parallel, Asynchronous) —
Density 16 Mbit (16777 kbits) —
Organisasi 1M x 16 / 2M x 8 1M x 8 / 512K x 16
Number of Words 1000 k —
Bits per Word 16 bits —
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V (operating 4.5 V) —
Antarmuka Parallel —
Synchronous / Asynchronous Asynchronous —
Boot Block Location Top boot block (FT) —
Suhu Kerja -40C to +125C -40C to +125C
Paket 48-Pin TSOP —
Tipe Mounting Surface Mount Surface Mount
Packaging Tape & Reel Tape & Reel (T/R)
Program / Erase Embedded byte/word program algorithms (controller on-chip) —
Status RoHS [DATA_NEEDED: RoHS status] Compliant (lead-free terminations)
Level MSL [DATA_NEEDED: moisture sensitivity level] —
Memory Density — 8389 kbits (8 Mbit)
Tegangan Pemuat — 5 V
Tipe Antarmuka — Parallel NOR
Boot Block Architecture — Bottom Boot Block
Program/Erase Controller — Embedded byte/word program algorithms
Temperature Grade — Automotive (AEC-Q100)
Package Type — 48-pin TSOP1
Package Shape — Rectangular (JESD designation TSOP1)
Terminal Count — 48
JESD-609 Termination Code — e3 (lead-free)

Spek dan Sumber

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