M29F400FB55N3F2 vs M29F200FT55N3F2 Perbandingan
Perbandingan bersamaan detil M29F400FB55N3F2 dari Micron Technology dan M29F200FT55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29F400FB55N3F2 | M29F200FT55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | NOR Flash, Parallel |
| Density | 4 Mbit (4194 kbit) | 2 Mbit (2097 kbits) |
| Organisasi | 256K x 16 / 512K x 8 | 256K x 8-bit / 128K x 16-bit |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemuat | 5 V | — |
| Antarmuka | Parallel | Parallel, BYTE pin selects 8/16-bit bus |
| Boot Block | Bottom boot block | — |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Paket | 48-TSOP I | 48-pin TSOP |
| Tipe Mounting | Surface Mount | Surface Mount |
| Standard Package Quantity | 1500 units (Tape & Reel) | — |
| Active/Standby Current | [DATA_NEEDED: active and standby current] | — |
| Erase/Program Endurance | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| VIO Range | [DATA_NEEDED: I/O voltage range] | — |
| Status RoHS | Compliant (lead-free build per F2 suffix) | [DATA_NEEDED: RoHS status] |
| Supply Voltage (VCC) | — | 5 V |
| Number of Words | — | 128 K |
| Bits per Word | — | 16 bits |
| Boot Block Architecture | — | Top Boot Block |
| Program/Erase | — | Embedded byte/word program algorithms |
| Packaging | — | Tape & Reel (TR suffix) |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |