M29F400FB55N3F2 vs M29F200FT55N3F2 比較
詳細並排比較 M29F400FB55N3F2 由 Micron Technology 與 M29F200FT55N3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29F400FB55N3F2 | M29F200FT55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash | NOR Flash, Parallel |
| Density | 4 Mbit (4194 kbit) | 2 Mbit (2097 kbits) |
| 組織 | 256K x 16 / 512K x 8 | 256K x 8-bit / 128K x 16-bit |
| Access Time | 55 ns | 55 ns |
| 供應電壓 | 5 V | — |
| 介面 | Parallel | Parallel, BYTE pin selects 8/16-bit bus |
| Boot Block | Bottom boot block | — |
| 工作溫度 | -40C to +125C | -40C to +125C |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| 封裝 | 48-TSOP I | 48-pin TSOP |
| 安裝類型 | Surface Mount | Surface Mount |
| Standard Package Quantity | 1500 units (Tape & Reel) | — |
| Active/Standby Current | [DATA_NEEDED: active and standby current] | — |
| Erase/Program Endurance | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| VIO Range | [DATA_NEEDED: I/O voltage range] | — |
| RoHS 狀態 | Compliant (lead-free build per F2 suffix) | [DATA_NEEDED: RoHS status] |
| Supply Voltage (VCC) | — | 5 V |
| Number of Words | — | 128 K |
| Bits per Word | — | 16 bits |
| Boot Block Architecture | — | Top Boot Block |
| Program/Erase | — | Embedded byte/word program algorithms |
| Packaging | — | Tape & Reel (TR suffix) |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |