M29F400FT55N3F2 vs M29F400FB55N3F2 Perbandingan
Perbandingan bersamaan detil M29F400FT55N3F2 dari Micron Technology dan M29F400FB55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | M29F400FT55N3F2 | M29F400FB55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash (SLC) | NOR Flash |
| Ukuran Memori | 4 Mbit | — |
| Organisasi | 256K x 16 | 256K x 16 / 512K x 8 |
| Antarmuka | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemuat | 5 V | 5 V |
| Block Architecture | Top boot block | — |
| Paket | 44-SO (SOP-44) | 48-TSOP I |
| Tipe Mounting | Surface Mount | Surface Mount |
| Temperature Grade | Auto Grade 3, up to +125C (per Micron ordering code) | — |
| Compliance Suffix | F2 (RoHS-compliant, lead-free plating) | — |
| Programming Voltage | Single supply (no 12 V VPP required) | — |
| Technology | Floating-gate NOR cell, charge-pump program/erase | — |
| Max Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| Suhu Kerja | [DATA_NEEDED: min operating temperature] | -40C to +125C |
| Density | — | 4 Mbit (4194 kbit) |
| Boot Block | — | Bottom boot block |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Standard Package Quantity | — | 1500 units (Tape & Reel) |
| Active/Standby Current | — | [DATA_NEEDED: active and standby current] |
| Erase/Program Endurance | — | [DATA_NEEDED: endurance cycles] |
| Data Retention | — | [DATA_NEEDED: retention years] |
| VIO Range | — | [DATA_NEEDED: I/O voltage range] |
| Status RoHS | — | Compliant (lead-free build per F2 suffix) |