M29F400FT55N3F2 vs M29F400FB55N3F2 Karşılaştırma
Ayrıntılı yan yana karşılaştırma M29F400FT55N3F2 tarafından Micron Technology ve M29F400FB55N3F2 tarafından Micron TechnologyAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Micron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ AktifÖzellik Karşılaştırması
| Parametre | M29F400FT55N3F2 | M29F400FB55N3F2 |
|---|---|---|
| Marka | Micron Technology | Micron Technology |
| Kategori | EEPROM | Memory ICs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Bellek Türü | NOR Flash (SLC) | NOR Flash |
| Bellek Boyutu | 4 Mbit | — |
| Organizasyon | 256K x 16 | 256K x 16 / 512K x 8 |
| Arayüz | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| Besleme Gerilimi | 5 V | 5 V |
| Block Architecture | Top boot block | — |
| Paket | 44-SO (SOP-44) | 48-TSOP I |
| Montaj Türü | Surface Mount | Surface Mount |
| Temperature Grade | Auto Grade 3, up to +125C (per Micron ordering code) | — |
| Compliance Suffix | F2 (RoHS-compliant, lead-free plating) | — |
| Programming Voltage | Single supply (no 12 V VPP required) | — |
| Technology | Floating-gate NOR cell, charge-pump program/erase | — |
| Max Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| İşletim Sıcaklığı | [DATA_NEEDED: min operating temperature] | -40C to +125C |
| Density | — | 4 Mbit (4194 kbit) |
| Boot Block | — | Bottom boot block |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Standard Package Quantity | — | 1500 units (Tape & Reel) |
| Active/Standby Current | — | [DATA_NEEDED: active and standby current] |
| Erase/Program Endurance | — | [DATA_NEEDED: endurance cycles] |
| Data Retention | — | [DATA_NEEDED: retention years] |
| VIO Range | — | [DATA_NEEDED: I/O voltage range] |
| RoHS Durumu | — | Compliant (lead-free build per F2 suffix) |