M29F400FT55N3F2 vs M29F400FB55N3F2 比較
詳細並排比較 M29F400FT55N3F2 由 Micron Technology 與 M29F400FB55N3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29F400FT55N3F2 | M29F400FB55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | EEPROM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash (SLC) | NOR Flash |
| 記憶體容量 | 4 Mbit | — |
| 組織 | 256K x 16 | 256K x 16 / 512K x 8 |
| 介面 | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| 供應電壓 | 5 V | 5 V |
| Block Architecture | Top boot block | — |
| 封裝 | 44-SO (SOP-44) | 48-TSOP I |
| 安裝類型 | Surface Mount | Surface Mount |
| Temperature Grade | Auto Grade 3, up to +125C (per Micron ordering code) | — |
| Compliance Suffix | F2 (RoHS-compliant, lead-free plating) | — |
| Programming Voltage | Single supply (no 12 V VPP required) | — |
| Technology | Floating-gate NOR cell, charge-pump program/erase | — |
| Max Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| 工作溫度 | [DATA_NEEDED: min operating temperature] | -40C to +125C |
| Density | — | 4 Mbit (4194 kbit) |
| Boot Block | — | Bottom boot block |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Standard Package Quantity | — | 1500 units (Tape & Reel) |
| Active/Standby Current | — | [DATA_NEEDED: active and standby current] |
| Erase/Program Endurance | — | [DATA_NEEDED: endurance cycles] |
| Data Retention | — | [DATA_NEEDED: retention years] |
| VIO Range | — | [DATA_NEEDED: I/O voltage range] |
| RoHS 狀態 | — | Compliant (lead-free build per F2 suffix) |