M29F800FB55M3F2 vs M29F800FB55N3F2 Perbandingan

Perbandingan bersamaan detil M29F800FB55M3F2 dari Micron Technology dan M29F800FB55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29F800FB55M3F2 M29F800FB55M3F2 - 8Mbit 5V 55ns NOR Flash SO44 | Micron

M29F800FB55M3F2 - 8Mbit 5V 55ns NOR Flash SO44 | Micron

M29F800FB55M3F2 ✓ Aktif
Micron Technology
M29F800FB55N3F2 M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29F800FB55M3F2 M29F800FB55N3F2
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori NOR Flash, Parallel —
Density 8389 kbits (8 Mbit) —
Organisasi 512K x 16-bit / 1M x 8-bit 1M x 8 / 512K x 16
Number of Words 512 k —
Bits per Word 16 bits —
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V —
Boot Block Type Bottom Boot Block —
Antarmuka Parallel, Asynchronous —
Programming Embedded byte/word program algorithms —
OTP Area 64 byte —
Suhu Kerja -40C to +125C -40C to +125C
Automotive Qualification Auto Grade 3 (temperature grade 3, +125C) —
Paket 44-pin SO (SOIC-44) —
Tipe Mounting Surface Mount Surface Mount
Packing Tape & Reel (T/R) —
Status RoHS [DATA_NEEDED: RoHS status] Compliant (lead-free terminations)
Endurance [DATA_NEEDED: program/erase endurance cycles] —
Memory Density — 8389 kbits (8 Mbit)
Tegangan Pemuat — 5 V
Tipe Antarmuka — Parallel NOR
Boot Block Architecture — Bottom Boot Block
Program/Erase Controller — Embedded byte/word program algorithms
Temperature Grade — Automotive (AEC-Q100)
Package Type — 48-pin TSOP1
Package Shape — Rectangular (JESD designation TSOP1)
Terminal Count — 48
JESD-609 Termination Code — e3 (lead-free)
Packaging — Tape & Reel (T/R)

Spek dan Sumber

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