M29F800FT55N3F2 vs M29F400FT55N3F2 Perbandingan
Perbandingan bersamaan detil M29F800FT55N3F2 dari Micron Technology dan M29F400FT55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29F800FT55N3F2 | M29F400FT55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash, Parallel | NOR Flash (SLC) |
| Ukuran Memori | 8 Mbit | 4 Mbit |
| Organisasi | 1M x 8 bit / 512K x 16 bit | 256K x 16 |
| Tegangan Pemuat | 5 V (single supply) | 5 V |
| Access Time | 55 ns | 55 ns |
| Antarmuka | Parallel | Parallel |
| Boot Block Architecture | Top boot block (T) | — |
| Programming Voltage | 5.0 V VCC (no 12 V VPP required) | Single supply (no 12 V VPP required) |
| Paket | 48-pin TSOP | 44-SO (SOP-44) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: min operating temperature] |
| Erase Block Size | [DATA_NEEDED: block size] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Active Read Current | [DATA_NEEDED: ICC read] | — |
| Block Architecture | — | Top boot block |
| Temperature Grade | — | Auto Grade 3, up to +125C (per Micron ordering code) |
| Compliance Suffix | — | F2 (RoHS-compliant, lead-free plating) |
| Technology | — | Floating-gate NOR cell, charge-pump program/erase |
| Max Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |