M29W064FT70N3E vs M29W064FT70N3F Perbandingan

Perbandingan bersamaan detil M29W064FT70N3E dari Micron Technology dan M29W064FT70N3F dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29W064FT70N3E M29W064FT70N3E - 64Mb 3V Parallel NOR Flash 70ns | Micron

M29W064FT70N3E - 64Mb 3V Parallel NOR Flash 70ns | Micron

M29W064FT70N3E ✓ Aktif
Micron Technology
M29W064FT70N3F M29W064FT70N3F - 64Mb 3V NOR Flash 70ns | Micron

M29W064FT70N3F - 64Mb 3V NOR Flash 70ns | Micron

M29W064FT70N3F ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29W064FT70N3E M29W064FT70N3F
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori NOR Flash (Parallel) NOR Flash
Density 64 Mbit 64 Mbit
Organisasi 8 Mb x8 or 4 Mb x16 8 Mbit x8 / 4 Mbit x16
Antarmuka Parallel, CFI compliant Parallel
Access Time 70 ns 70 ns
Tegangan Pemuat 2.7 V to 3.6 V —
Boot Block Architecture Top boot block (FT) —
Suhu Kerja -40C to +85C -40C to +125C
Paket 48-TSOP 48-TSOP I
Tipe Mounting Surface Mount Surface Mount
Programming Voltage Single 3 V supply (no separate VPP required) —
Erase/Program Method Command-set page programming, block erase —
Product Longevity Program No No
Program/Erase Cycles [DATA_NEEDED: program/erase endurance cycles] —
Active Read Current [DATA_NEEDED: active read supply current] —
Standby Current [DATA_NEEDED: standby current] —
Status RoHS [DATA_NEEDED: RoHS compliance status] unknown
Supply Voltage (VCC) — up to 3.6 V for program, erase, read
VPP Fast Program Voltage — 12 V (optional)
Boot Block Configuration — Top boot block (FT)
Programming Method — Command set / data polling / toggle bit
Block Protection — Yes, with temporary unprotection
Width — x8/x16

Spek dan Sumber

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