M29W064FT70N3E vs M29W064FT70N3F Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W064FT70N3E disebabkan oleh Micron Technology dan M29W064FT70N3F disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29W064FT70N3E | M29W064FT70N3F |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash (Parallel) | NOR Flash |
| Density | 64 Mbit | 64 Mbit |
| Organisasi | 8 Mb x8 or 4 Mb x16 | 8 Mbit x8 / 4 Mbit x16 |
| Antaramuka | Parallel, CFI compliant | Parallel |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V | — |
| Boot Block Architecture | Top boot block (FT) | — |
| Suhu Operasi | -40C to +85C | -40C to +125C |
| Kemasan | 48-TSOP | 48-TSOP I |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Programming Voltage | Single 3 V supply (no separate VPP required) | — |
| Erase/Program Method | Command-set page programming, block erase | — |
| Product Longevity Program | No | No |
| Program/Erase Cycles | [DATA_NEEDED: program/erase endurance cycles] | — |
| Active Read Current | [DATA_NEEDED: active read supply current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | unknown |
| Supply Voltage (VCC) | — | up to 3.6 V for program, erase, read |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Boot Block Configuration | — | Top boot block (FT) |
| Programming Method | — | Command set / data polling / toggle bit |
| Block Protection | — | Yes, with temporary unprotection |
| Width | — | x8/x16 |