M29W128GH70N3E vs M29W128GL70N3E Perbandingan
Perbandingan bersamaan detil M29W128GH70N3E dari Micron Technology dan M29W128GL70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29W128GH70N3E | M29W128GL70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | NOR Flash (Parallel) |
| Ukuran Memori | 128 Mbit (16 MB) | — |
| Organisasi | 8M x 16 / 16M x 8 | 16M x8 / 8M x16 |
| Antarmuka | Parallel (asynchronous) | Parallel |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemuat | 2.7 V to 3.6 V | 2.7 V to 3.6 V (3V/3.3V class) |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Temperature Grade | Automotive | — |
| Paket | 56-TSOP | 56-pin TSOP |
| Number of Terminals | 56 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Lebar Bus Data | 16 bit (byte/word selectable) | — |
| Memory Density | 131072 kbit | — |
| Programming | Command-sequence program/erase with status polling | — |
| Application Segment | Automotive / Industrial code storage | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Density | — | 128 Mbit |
| Boot Block Configuration | — | Bottom boot (GL suffix) |
| Packaging | — | Tray |
| Automotive Qualification | — | Automotive grade ordering code (N3E) |
| Bus Width Mode | — | Software-selectable x8/x16 (BYTE# pin) |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase cycles] |