M29W128GH70N3E vs M29W128GL70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W128GH70N3E disebabkan oleh Micron Technology dan M29W128GL70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29W128GH70N3E | M29W128GL70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | NOR Flash (Parallel) |
| Saiz Ingatan | 128 Mbit (16 MB) | — |
| Organisasi | 8M x 16 / 16M x 8 | 16M x8 / 8M x16 |
| Antaramuka | Parallel (asynchronous) | Parallel |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V | 2.7 V to 3.6 V (3V/3.3V class) |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Temperature Grade | Automotive | — |
| Kemasan | 56-TSOP | 56-pin TSOP |
| Number of Terminals | 56 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Lebar Bus Data | 16 bit (byte/word selectable) | — |
| Memory Density | 131072 kbit | — |
| Programming | Command-sequence program/erase with status polling | — |
| Application Segment | Automotive / Industrial code storage | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Density | — | 128 Mbit |
| Boot Block Configuration | — | Bottom boot (GL suffix) |
| Packaging | — | Tray |
| Automotive Qualification | — | Automotive grade ordering code (N3E) |
| Bus Width Mode | — | Software-selectable x8/x16 (BYTE# pin) |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase cycles] |