M29W128GL70N3E vs M29W128GH70N3E Perbandingan

Perbandingan bersamaan detil M29W128GL70N3E dari Micron Technology dan M29W128GH70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29W128GL70N3E M29W128GL70N3E - 128Mb 3V NOR Flash 70ns TSOP-56 | Micron

M29W128GL70N3E - 128Mb 3V NOR Flash 70ns TSOP-56 | Micron

M29W128GL70N3E ✓ Aktif
Micron Technology
M29W128GH70N3E M29W128GH70N3E - 128Mb Parallel NOR Flash, 70ns | Micron

M29W128GH70N3E - 128Mb Parallel NOR Flash, 70ns | Micron

M29W128GH70N3E ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29W128GL70N3E M29W128GH70N3E
Merek Micron Technology Micron Technology
Kategori Flash Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori NOR Flash (Parallel) NOR Flash
Density 128 Mbit —
Organisasi 16M x8 / 8M x16 8M x 16 / 16M x 8
Access Time 70 ns 70 ns
Tegangan Pemuat 2.7 V to 3.6 V (3V/3.3V class) 2.7 V to 3.6 V
Antarmuka Parallel Parallel (asynchronous)
Boot Block Configuration Bottom boot (GL suffix) —
Suhu Kerja -40C to +125C -40C to +125C
Paket 56-pin TSOP 56-TSOP
Tipe Mounting Surface Mount Surface Mount
Packaging Tray —
Automotive Qualification Automotive grade ordering code (N3E) —
Bus Width Mode Software-selectable x8/x16 (BYTE# pin) —
Standby Current [DATA_NEEDED: standby current] —
Program/Erase Endurance [DATA_NEEDED: program/erase cycles] —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Ukuran Memori — 128 Mbit (16 MB)
Temperature Grade — Automotive
Number of Terminals — 56
Lebar Bus Data — 16 bit (byte/word selectable)
Memory Density — 131072 kbit
Programming — Command-sequence program/erase with status polling
Application Segment — Automotive / Industrial code storage
Program/Erase Cycles — [DATA_NEEDED: endurance]

Spek dan Sumber

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