M29W128GL70N3E vs M29W128GH70N3E Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W128GL70N3E disebabkan oleh Micron Technology dan M29W128GH70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29W128GL70N3E M29W128GL70N3E - 128Mb 3V NOR Flash 70ns TSOP-56 | Micron

M29W128GL70N3E - 128Mb 3V NOR Flash 70ns TSOP-56 | Micron

M29W128GL70N3E ✓ Aktif
Micron Technology
M29W128GH70N3E M29W128GH70N3E - 128Mb Parallel NOR Flash, 70ns | Micron

M29W128GH70N3E - 128Mb Parallel NOR Flash, 70ns | Micron

M29W128GH70N3E ✓ Aktif

Pengandingan Spesifikasi

Parametr M29W128GL70N3E M29W128GH70N3E
Merek Micron Technology Micron Technology
Kategori Flash Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan NOR Flash (Parallel) NOR Flash
Density 128 Mbit —
Organisasi 16M x8 / 8M x16 8M x 16 / 16M x 8
Access Time 70 ns 70 ns
Tegangan Pemberi Arus 2.7 V to 3.6 V (3V/3.3V class) 2.7 V to 3.6 V
Antaramuka Parallel Parallel (asynchronous)
Boot Block Configuration Bottom boot (GL suffix) —
Suhu Operasi -40C to +125C -40C to +125C
Kemasan 56-pin TSOP 56-TSOP
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tray —
Automotive Qualification Automotive grade ordering code (N3E) —
Bus Width Mode Software-selectable x8/x16 (BYTE# pin) —
Standby Current [DATA_NEEDED: standby current] —
Program/Erase Endurance [DATA_NEEDED: program/erase cycles] —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Saiz Ingatan — 128 Mbit (16 MB)
Temperature Grade — Automotive
Number of Terminals — 56
Lebar Bus Data — 16 bit (byte/word selectable)
Memory Density — 131072 kbit
Programming — Command-sequence program/erase with status polling
Application Segment — Automotive / Industrial code storage
Program/Erase Cycles — [DATA_NEEDED: endurance]

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