M29W128GL70N3F vs M29W640GB70N3F Perbandingan
Perbandingan bersamaan detil M29W128GL70N3F dari Micron Technology dan M29W640GB70N3F dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29W128GL70N3F | M29W640GB70N3F |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Tipe Memori | NOR Flash | NOR Flash, Parallel |
| Memory Format | FLASH - NOR | — |
| Density | 128 Mbit | 64 Mb (8 MB) |
| Organisasi | 8M x16 / 16M x8 | x8 / x16 |
| Antarmuka | Parallel | — |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemuat | [DATA_NEEDED: supply voltage range] | 2.7 V to 3.6 V |
| Paket | 56-TSOP | 48-TSOP I |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Block Organization Variant | GL (boot-block) | — |
| Speed Grade Code | -70 | — |
| Package Finish Code | N3F (lead-free TSOP) | — |
| Programming Interface | Command-set parallel bus, embedded state machine | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | — |
| Qualification | — | Automotive AEC-Q100 |
| Program/Erase Interface | — | Parallel command set with status polling |
| Block Architecture | — | Uniform block (GB variant) |
| Part Status | — | Obsolete |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Read Current | — | [DATA_NEEDED: active read current] |