M29W128GL70N3F vs M29W640GB70N3F 比較
詳細並排比較 M29W128GL70N3F 由 Micron Technology 與 M29W640GB70N3F 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29W128GL70N3F | M29W640GB70N3F |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | Obsolete |
| 記憶體類型 | NOR Flash | NOR Flash, Parallel |
| Memory Format | FLASH - NOR | — |
| Density | 128 Mbit | 64 Mb (8 MB) |
| 組織 | 8M x16 / 16M x8 | x8 / x16 |
| 介面 | Parallel | — |
| Access Time | 70 ns | 70 ns |
| 供應電壓 | [DATA_NEEDED: supply voltage range] | 2.7 V to 3.6 V |
| 封裝 | 56-TSOP | 48-TSOP I |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Block Organization Variant | GL (boot-block) | — |
| Speed Grade Code | -70 | — |
| Package Finish Code | N3F (lead-free TSOP) | — |
| Programming Interface | Command-set parallel bus, embedded state machine | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | — |
| Qualification | — | Automotive AEC-Q100 |
| Program/Erase Interface | — | Parallel command set with status polling |
| Block Architecture | — | Uniform block (GB variant) |
| Part Status | — | Obsolete |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Read Current | — | [DATA_NEEDED: active read current] |