M29W160EB80ZA3SE vs M29W160ET70N3F Perbandingan
Perbandingan bersamaan detil M29W160EB80ZA3SE dari Micron Technology dan M29W160ET70N3F dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29W160EB80ZA3SE | M29W160ET70N3F |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash (Parallel) | Parallel NOR Flash |
| Ukuran Memori | 16 Mbit (2M x8 / 1M x16) | 16 Mbit (2 M x 8 / 1 M x 16) |
| Access Time | 80 ns | 70 ns |
| Antarmuka | Parallel (Byte-wide / Word-wide) | — |
| Tegangan Pemuat | 2.7 V to 3.6 V | 3 V / 3.3 V |
| Organisasi | 16 Mbit Boot Block, x8/x16 selectable | — |
| Suhu Kerja | -40C to +125C | — |
| Paket | 48-TFBGA (6x8 mm, 0.8 mm ball pitch) | 48-pin TSOP |
| Tipe Mounting | Surface Mount (BGA) | Surface Mount |
| Packaging | Tape & Reel (TR) | Tape and Reel |
| Qualification | AEC-Q100 (automotive grade per datasheets.com listing) | AEC-Q100 qualified |
| Programming Supply | Single 3V supply for program, erase and read | — |
| Technology Family | M29W160EB (3rd generation M29W series) | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Erase Block Architecture | Boot block (parameter and main blocks) | — |
| Program/Erase Cycles | [DATA_NEEDED: program/erase endurance cycles] | — |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | — |
| Status RoHS | Pb-free (SE suffix) | RoHS-compliant package (F option) |
| Technology | — | CMOS |
| Boot Block Architecture | — | Top boot |
| Bus Configuration | — | x8 / x16 selectable |
| Temperature Grade | — | Automotive (AEC-Q100) |
| Programming Interface | — | Parallel command set |
| Number of Terminals | — | 48 |